FGH40T120SMD / FGH40T120SMD_f15 5 1200 v, 40 a fs trench igbt july 2013 ?2013 fairchild semiconductor corporation 1 www.fairchildsemi.com FGH40T120SMD / FGH40T120SMD_f155 rev. c2 absolute maximum ratings t c = 25c unless otherwise noted thermal characteristics notes: 1. vcc = 600 v,v ge = 15 v, i c = 160 a, r g = 10 ?, inductive load 2. limited by tjmax symbol description ratings unit v ces collector to emitter voltage 1200 v v ges gate to emitter voltage 25 v transient gate to emitter voltage 30 v i c collector current @ t c = 25 o c80 a collector current @ t c = 100 o c40 a i lm (1) clamped inductive load current @ t c = 25 o c 160 a i cm (2) pulsed collector current 160 a i f diode continuous forward current @ t c = 25 o c 80 a diode continuous forward current @ t c = 100 o c 40 a i fm diode maximum forward current 240 a p d maximum power dissipation @ t c = 25 o c 555 w maximum power dissipation @ t c = 100 o c 277 w t j operating junction temperature -55 to +175 o c t stg storage temperature range -55 to +175 o c t l maximum lead temp. for soldering purposes, 1/8? from case for 5 seconds 300 o c symbol parameter typ. max. unit r ? jc (igbt) thermal resistance, junction to case -- 0.27 o c / w r ? jc (diode) thermal resistance, junction to case -- 0.89 o c / w r ? ja thermal resistance, junction to ambient -- 40 o c / w g c e collector (flange) e c g FGH40T120SMD / FGH40T120SMD_f155 1200 v, 40 a fs trench igbt features ? fs trench technology, positive temperature coefficient ? high speed switching ? low saturation voltage: v ce(sat) =1.8 v @ i c = 40 a ? 100% of the parts tested for i lm (1) ? high input impedance ? rohs compliant applications ? solar inverter, welder, ups & pfc applications. general description using innovative field stop tr ench igbt technology, fairchild ? ?s new series of field stop trench igbts offer the optimum performance for hard switching application such as solar inverter, ups, welder and pfc applications.
?2013 fairchild semiconductor corporation 2 www.fairchildsemi.com FGH40T120SMD / FGH40T120SMD_f15 5 1200 v, 40 a fs trench igbt FGH40T120SMD / FGH40T120SMD_f155 rev. c2 package marking and ordering information electrical characteristi cs of the igbt t c = 25c unless otherwise noted device marking device package r eel size tape width quantity FGH40T120SMD FGH40T120SMD to-247 a03 - - 30 FGH40T120SMD FGH40T120SMD_f155 to-247g03 - - 30 symbol parameter test conditions min. typ. max. unit off characteristics bv ces collector to emitter breakdown voltage v ge = 0 v, i c = 250 ua 1200 - - v i ces collector cut-off current v ce = v ces , v ge = 0 v - - 250 ua i ges g-e leakage current v ge = v ges , v ce = 0 v - - 400 na on characteristics v ge(th) g-e threshold voltage i c = 40 ma, v ce = v ge 4.9 6.2 7.5 v v ce(sat) collector to emitter saturation voltage i c = 40 a , v ge = 15 v t c = 25 o c -1.82.4v i c = 40 a , v ge = 15 v, t c = 175 o c -2.0- v dynamic characteristics c ies input capacitance v ce = 30 v , v ge = 0 v, f = 1mhz - 4300 - pf c oes output capacitance - 180 - pf c res reverse transfer capacitance - 100 - pf switching characcteristics t d(on) turn-on delay time v cc = 600 v, i c = 40 a, r g = 10 ? , v ge = 15 v, inductive load, t c = 25 o c -40- ns t r rise time - 47 - ns t d(off) turn-off delay time - 475 - ns t f fall time - 10 - ns e on turn-on switching loss - 2.7 - mj e off turn-off switching loss - 1.1 - mj e ts total switching loss - 3.8 - mj t d(on) turn-on delay time v cc = 600 v, i c = 40 a, r g = 10 ? , v ge = 15 v, inductive load, t c = 175 o c -40- ns t r rise time - 55 - ns t d(off) turn-off delay time - 520 - ns t f fall time - 50 - ns e on turn-on switching loss - 3.4 - mj e off turn-off switching loss - 2.5 - mj e ts total switching loss - 5.9 - mj q g total gate charge v ce = 600 v, i c = 40 a, v ge = 15 v - 370 - nc q ge gate to emitter charge - 23 - nc q gc gate to collector charge - 210 - nc
?2013 fairchild semiconductor corporation 3 www.fairchildsemi.com FGH40T120SMD / FGH40T120SMD_f15 5 1200 v, 40 a fs trench igbt FGH40T120SMD / FGH40T120SMD_f155 rev. c2 electrical characteristi cs of the diode t c = 25c unless otherwise noted symbol parameter test conditions min. typ. max. unit v fm diode forward voltage i f = 40 a , t c = 25 o c-3.84.8 v i f = 40 a , t c = 175 o c-2.7- v t rr diode reverse recovery time v r = 600 v, i f = 40 a, di f /dt = 200 a/us, t c = 25 o c -65- ns i rr diode peak reverse recovery current - 7.2 - a q rr diode reverse recovery charge - 234 - nc t rr diode reverse recovery time v r = 600 v, i f = 40 a, di f /dt = 200 a/us, t c = 175 o c - 200 - ns i rr diode peak reverse recovery current - 18.0 - a q rr diode reverse recovery charge - 1800 - nc
?2013 fairchild semiconductor corporation 4 www.fairchildsemi.com FGH40T120SMD / FGH40T120SMD_f15 5 1200 v, 40 a fs trench igbt FGH40T120SMD / FGH40T120SMD_f155 rev. c2 typical performance characteristics figure 1. typical output characteristics figure 2. typical output char acteristics figure 3. typical saturation voltage figure 4. saturation voltage vs. case characteristics temperature at variant cur rent level figure 5. saturation voltage vs. v ge figure 6. saturation voltage vs. v ge 012345678910 0 50 100 150 200 250 300 v ge =10v 20v 15v 12v 17v t c = 25 o c collector current, i c [a] collector-emitter voltage, v ce [v] 012345678910 0 50 100 150 200 250 300 v ge =10v 20v 15v 12v 17v t c = 175 o c collector current, i c [a] collector-emitter voltage, v ce [v] 25 50 75 100 125 150 175 1 2 3 4 80a i c =20a 40a common emitter v ge = 15 v collector emitter voltage, v ce [v] case temperature t c [ o c ] 012345 0 40 80 120 160 common emitter v g e = 15 v t c = 25 o c t c = 175 o c --- collector current, i c [a] collector-emitter voltage, v ce [v] 048121620 0 4 8 12 16 20 80a i c =20a 40a common emitter t c = 25 o c collector emitter voltage, v ce [v] gate-emitter voltage, v ge [v] 0 4 8 12 16 20 0 4 8 12 16 20 80a i c =20a 40a common emitter t c = 175 o c collector emitter voltage, v ce [v] gate-emitter voltage, v ge [v]
?2013 fairchild semiconductor corporation 5 www.fairchildsemi.com FGH40T120SMD / FGH40T120SMD_f15 5 1200 v, 40 a fs trench igbt FGH40T120SMD / FGH40T120SMD_f155 rev. c2 typical performance characteristics figure 7. capacitance characteristics figure 8. load current vs. frequency figure 9. turn-on characteristics vs. figure 10. turn-off characteristics vs. gate resistance gate resistance figure 11. swithcing loss vs. figure 12. turn-on characteristics vs. gate resistance collector current 1 1000 2000 3000 4000 5000 6000 ciss crss coss 10 common emitter v g e = 0 v , f = 1mhz t c = 25 o c cappacitance [pf] collector-emitter voltage, v ce [v] 1k 10k 100k 1m 0 40 80 120 160 200 duty cycle : 50% t c = 100 o c powe dissipation = 277 w v cc = 600v load current : peak of square wave t c = 100 o c collector current, i c [a] switching frequency, f [hz] 0 1020304050 1 10 100 1000 switching time [ns] common emitter v cc = 600v, v ge = 15v i c = 40a t c = 25 o c t c = 175 o c t d(on) t r gate resistance, r g [ ? ] 0 10203040506070 1 10 100 1000 common emitter v cc = 600v, v ge = 15v, i c = 40a t c = 25 o c , t c = 175 o c t d(off) t f switching time [ns] gate resistance, r g [ ? ] 10 20 30 40 50 60 70 80 10 100 common emitter v ge = 15v, r g = 10 ? t c = 25 o c t c = 175 o c t r t d(on) switching time [ns] collector current, i c [a] 0 10203040506070 0.1 1 10 common emitter v cc = 600v, v ge = 15v i c = 40a t c = 25 o c t c = 175 o c e on e off switching loss [mj] gate resistance , r g [ ? ]
?2013 fairchild semiconductor corporation 6 www.fairchildsemi.com FGH40T120SMD / FGH40T120SMD_f15 5 1200 v, 40 a fs trench igbt FGH40T120SMD / FGH40T120SMD_f155 rev. c2 typical performance characteristics figure 13. turn-off characteristics vs . figure 14. swithcing loss vs. c o l l e c t o r c u r r e n t c o l l e c t o r c u r r e n t figure 15. gate charge characteristics figure 16. soa characteristics figure 17. forward characteristics figure 18. reverse recovery current 10 20 30 40 50 60 70 80 0.1 1 10 30 common emitter v ge = 15v, r g = 10 ? t c = 25 o c t c = 175 o c e on e off switching loss [mj] collector current, i c [a] 20 40 60 80 1 10 100 1000 common emitter v ge = 15v, r g = 10 ? t c = 25 o c , t c = 175 o c t d(off) t f switching time [ns] collector current, i c [ a ] 0 50 100 150 200 250 300 350 400 0 3 6 9 12 15 200v 400v v cc = 600v common emitter t c = 25 o c gate emitter voltage, v ge [v] gate charge, q g [nc] 0.1 1 10 100 1000 0.01 0.1 1 10 100 icmax (continuous) icmax (pulsed) 1ms 10 ms dc operation single nonrepetitive pulse tc = 25 o c curves must be derated linearly with increase in temperature 10 ? s 100 ? s collector current, i c [a] collector-emitter voltage, v ce [v] 012345 1 10 100 t c = 25 o c t c = 175 o c --- forward current, i f [a] forward voltage, v f [v] 0 1020304050607080 2 4 6 8 10 v r = 600 v, i f = 40 a t c = 25 o c di f /dt = 100 a/ ? s reverse recovery currnet, i rr [a] foward current, i f [a] di f /dt = 200 a/ ? s
?2013 fairchild semiconductor corporation 7 www.fairchildsemi.com FGH40T120SMD / FGH40T120SMD_f15 5 1200 v, 40 a fs trench igbt FGH40T120SMD / FGH40T120SMD_f155 rev. c2 typical performance characteristics figure 19. reverse recovery time figure 20. stored charge figure 21. transient thermal impedance of igbt 0 1020304050607080 50 60 70 80 90 100 v r = 600 v, i f = 40 a t c = 25 o c di f /dt = 200 a/ ? s di f /dt = 100 a/ ? s reverse recovery time, t rr [ns] forward current , i f [ a ] 0 1020304050607080 0 100 200 300 400 v r = 600 v, i f = 40 a t c = 25 o c di f /dt = 200 a/ ? s di f /dt = 100 a/ ? s stored recovery charge, q rr [nc] forwad current, i f [a] 1e-6 1e-5 1e-4 1e-3 0.01 0.1 1 1e-3 0.01 0.1 1 0.01 0.02 0.1 0.05 0.3 single pulse thermal response [zthjc] rectangular pulse duration [sec] duty factor, d = t1/t2 peak t j = pdm x zthjc + t c 0.5 t 1 p dm t 2
?2013 fairchild semiconductor corporation 8 www.fairchildsemi.com FGH40T120SMD / FGH40T120SMD_f15 5 1200 v, 40 a fs trench igbt FGH40T120SMD / FGH40T120SMD_f155 rev. c2 mechanical dimensions to - 247a03
?2013 fairchild semiconductor corporation 9 www.fairchildsemi.com FGH40T120SMD / FGH40T120SMD_f15 5 1200 v, 40 a fs trench igbt FGH40T120SMD / FGH40T120SMD_f155 rev. c2 mechanical dimensions to-247g03
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?2013 fairchild semiconductor corporation 10 www.fairchildsemi.com FGH40T120SMD / FGH40T120SMD_f1 55 1200 v, 40 a fs trench igbt FGH40T120SMD / FGH40T120SMD_f155 rev. c2
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